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    • Keywords


      Semiconductor; high pressure; phase transition.

    • Abstract


      The structure and pressure-induced phase transitions for CdSe are investigated using first-principles calculations. The pressure-induced phase transition sequence WZ/ZB $\to$ Rs $\to$ 𝐶𝑚𝑐𝑚 $\to$ CsCl for CdSe is drawn reasonably for the fist time, the corresponding transition pressures are 3.8, 29 and 107 GPa, respectively and the intermediate states between the 𝐶𝑚𝑐𝑚 structure and the CsCl structure should exist.

    • Author Affiliations


      Bo Kong1 2 Ti-Xian Zeng3 Zhu-Wen Zhou1 De-Liang Chen1 Xiao-Wei Sun4

      1. School of Physics and Electronic Sciences, Guizhou Normal College, Guiyang 550018, China
      2. Guizhou Provincial Key Laboratory of Computational Nano-Material Science, Guizhou Normal College, Guiyang 550018, China
      3. College of Physics and Electronic Information, China West Normal University, Nanchong 637002, China
      4. School of Mathematics and Physics, Lanzhou Jiaotong University, Lanzhou 730070, China
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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