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      https://www.ias.ac.in/article/fulltext/boms/037/03/0549-0552

    • Keywords

       

      Semiconductor; high pressure; phase transition.

    • Abstract

       

      The structure and pressure-induced phase transitions for CdSe are investigated using first-principles calculations. The pressure-induced phase transition sequence WZ/ZB $\to$ Rs $\to$ 𝐶𝑚𝑐𝑚 $\to$ CsCl for CdSe is drawn reasonably for the fist time, the corresponding transition pressures are 3.8, 29 and 107 GPa, respectively and the intermediate states between the 𝐶𝑚𝑐𝑚 structure and the CsCl structure should exist.

    • Author Affiliations

       

      Bo Kong1 2 Ti-Xian Zeng3 Zhu-Wen Zhou1 De-Liang Chen1 Xiao-Wei Sun4

      1. School of Physics and Electronic Sciences, Guizhou Normal College, Guiyang 550018, China
      2. Guizhou Provincial Key Laboratory of Computational Nano-Material Science, Guizhou Normal College, Guiyang 550018, China
      3. College of Physics and Electronic Information, China West Normal University, Nanchong 637002, China
      4. School of Mathematics and Physics, Lanzhou Jiaotong University, Lanzhou 730070, China
    • Dates

       
  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

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