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    • Keywords


      CuInSe2; doping; zinc; Williamson–Hall; high frequency.

    • Abstract


      Incorporation of the doping element Zn in the temperature range (550–700 °C) and the impact on structural and electrical properties of CuInSe2 material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe2 and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe2 by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases.

    • Author Affiliations


      M Benabdeslem1 A Bouasla1 N Benslim1 L Bechiri1 S Mehdaoui1 O Aissaoui1 A Djekoun1 M Fromm2 X Portier3

      1. Laboratoire LESIMS, Université d’Annaba, BP12, 23200 Sidi Amar, Algerie
      2. Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray, 25030 Besançon, France
      3. CIMAP, ENSICAEN/Université de Caen, 6-Bd du Maréchal Juin 14050, Caen, France
    • Dates

  • Bulletin of Materials Science | News

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