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    • Keywords


      Resistive switching; TEM; ZrO2; low temperature.

    • Abstract


      We have fabricated ZrO2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible 𝐼-𝑉 curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, 𝑅L and 𝑅H values can be controlled by the RESET voltage. Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of 𝑅off/𝑅on reduced when the measured temperature decreased. When the 𝐼-𝑉 measurement temperature decreases, 𝑅on decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.

    • Author Affiliations


      Ying Li1 Gaoyang Zhao2 Jian Su2 Erfeng Shen2 Yang Ren2

      1. Advanced Material Analysis Center, Xi’an University of Technology, Box 759#, No. 5, Jinhua South Road, Xi’an, Shaanxi 710048, China
      2. Material Science and Engineering School, Xi’an University of Technology, Xi’an, Shaanxi 710048, China
    • Dates

  • Bulletin of Materials Science | News

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