We have fabricated ZrO2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible 𝐼-𝑉 curves can be obtained for the device Cu/ZrO2/ATO which is measured at room temperature (300 K). During the RESET operation, 𝑅L and 𝑅H values can be controlled by the RESET voltage. Moreover, the Cu/ZrO2/ATO device which the ZrO2 thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of 𝑅off/𝑅on reduced when the measured temperature decreased. When the 𝐼-𝑉 measurement temperature decreases, 𝑅on decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO2 films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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