• Effects of thickness on electronic structure of titanium thin films

    • Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      NEXAFS; titanium; branching ratio; electron escape depth; thin films.

    • Abstract


      Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 𝐿2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 𝐿2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth (𝜆) in titanium, an important parameter for surface applications, was determined to be 𝜆 = 2.6 ± 0.1 nm using 𝐿2,3 resonance intensity variation as a function of film thickness. The average 𝐿3/𝐿2 white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each 𝐿3 and 𝐿2 peaks and 0.66 from the integrated area under each 𝐿3 and 𝐿2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

    • Author Affiliations


      Güvenç Akgül1

      1. Bor Vocational School, Nigde University, 51700 Nigde, Turkey
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.