• Effects of thickness on electronic structure of titanium thin films

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      https://www.ias.ac.in/article/fulltext/boms/037/01/0041-0045

    • Keywords

       

      NEXAFS; titanium; branching ratio; electron escape depth; thin films.

    • Abstract

       

      Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 𝐿2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 𝐿2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth (𝜆) in titanium, an important parameter for surface applications, was determined to be 𝜆 = 2.6 ± 0.1 nm using 𝐿2,3 resonance intensity variation as a function of film thickness. The average 𝐿3/𝐿2 white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each 𝐿3 and 𝐿2 peaks and 0.66 from the integrated area under each 𝐿3 and 𝐿2 peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

    • Author Affiliations

       

      Güvenç Akgül1

      1. Bor Vocational School, Nigde University, 51700 Nigde, Turkey
    • Dates

       
  • Bulletin of Materials Science | News

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