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    • Analysis of Li-related defects in ZnO thin films influenced by annealing ambient

      Bing Wang Lidan Tang

      Volume 37 Issue 1 February 2014 pp 35-39

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/037/01/0035-0039

    • Keywords

       

      ZnO; thin films; radio frequency magnetron sputtering.

    • Abstract

       

      Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with 𝑐-axis orientation, uniform thickness and dense surface. Electrical and optical properties demonstrated that, an amount of LiZn defect had existed in ZnO annealed under O2 ambient and an amount of Lii(o) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO.

    • Author Affiliations

       

      Bing Wang1 Lidan Tang1

      1. Department of Materials Science and Engineering, Liaoning University of Technology, Jinzhou 121001, China

    • Dates

       
      Published
      February 2014
      Manuscript received
      28 July 2012
      Manuscript revised
      21 September 2012

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