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      https://www.ias.ac.in/article/fulltext/boms/036/07/1177-1185

    • Keywords

       

      a-SiC:H thin films; HW-CVD; FTIR spectroscopy; X-ray photoelectron spectroscopy (XPS); Raman spectroscopy.

    • Abstract

       

      Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared using pure silane (SiH4) and ethane (C2H6), a novel carbon source, without hydrogen dilution using hot wire chemical vapour deposition (HW-CVD) method at low substrate temperature (200 °C) and at reasonably higher deposition rate (19.5 Å/s < 𝑟d < 35.2 Å/s). Formation of a-SiC:H films has been confirmed from FTIR, Raman and XPS analysis. Influence of deposition pressure on compositional, structural, optical and electrical properties has been investigated. FTIR spectroscopy analysis revealed that there is decrease in C–H and Si–H bond densities while, Si–C bond density increases with increase in deposition pressure. Total hydrogen content drops from 22.6 to 14.4 at.% when deposition pressure is increased. Raman spectra show increase in structural disorder with increase in deposition pressure. It also confirms the formation of nearly stoichiometric a-SiC:H films. Bandgap calculated using both Tauc’s formulation and absorption at 104 cm-1 shows decreasing trend with increase in deposition pressure. Decrease in refractive index and increase in Urbach energy suggests increase in structural disorder and microvoid density in the films. Finally, it has been concluded that C2H6 can be used as an effective carbon source in HW-CVD method to prepare stoichiometric a-SiC:H films.

    • Author Affiliations

       

      Mahesh M Kamble1 Vaishali S Waman1 2 Sanjay S Ghosh1 Azam Mayabadi1 Vasant G Sathe3 T Shripathi3 Habib M Pathan4 Sandesh R Jadkar4

      1. School of Energy Studies, University of Pune, Pune 411 007, India
      2. Department of Physics, Modern College, Pune 411 005, India
      3. UGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, India
      4. Department of Physics, University of Pune, Pune 411 007, India
    • Dates

       
  • Bulletin of Materials Science | News

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