The temperature-dependent PL properties of GaN-rich In𝑥Ga1−𝑥N alloys is investigated and 𝑆-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples.
Volume 45, 2022
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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