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    • Keywords


      InGaN; localization effect; temperature dependence; modified band-tail model.

    • Abstract


      The temperature-dependent PL properties of GaN-rich In𝑥Ga1−𝑥N alloys is investigated and 𝑆-shaped temperature dependence is observed in all InGaN samples. It is found that the origin of localization effect in samples A and B are different from that in sample C. For samples A and B, In content fluctuations should be the origin of localization effect, while the localization effect can be attributed to In-rich clusters and metallic indium inclusions for sample C. In addition, the band-tail model is modified and the modified band-tail model is used to investigate the degree of localization effect in the three samples.

    • Author Affiliations


      Chuan-Zhen Zhao1 Bin Liu2 De-Yi Fu2 Hui Chen2 Ming Li2 Xiang-Qian Xiu2 Zi-Li Xie2 Shu-Lin Gu2 You-Dou Zheng2

      1. School of Electronics and Information Engineering, Tianjin Polytechnics University, Tianjin 300160, China
      2. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Nanjing National Laboratory of Microstructures, Department of Physics, Nanjing University, Nanjing 210093, China
    • Dates

  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

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      Posted on July 25, 2019

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