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    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/036/03/0389-0393

    • Keywords

       

      Ferroelectric thin film; (Pb1−𝑥La𝑥)(Zr1−𝑦 Ti𝑦)O3 (PLBZT); Bi doping; sol–gel.

    • Abstract

       

      [Pb0.95(La1−𝑦Bi𝑦)0.05][Zr0.53Ti0.47]O3 (PLBZT) ferroelectric thin films have been synthesized on indium tin oxide (ITO)-coated glass by sol–gel processing. PLBZT thin films were annealed at a relatively low temperature of 550 °C in oxygen ambient. Effects of Bi doping on structure, dielectric and ferroelectric properties of PLBZT were investigated. Bi doping is useful in crystallization of PLBZT films and promoting grain growth. When the Bi-doping content 𝑦 is not more than 0.4, an obvious improvement in dielectric properties and leakage current of PLBZT was confirmed. However, when the Bi-doping content is more than 0.6, the pyrochlore phase appears and the remnant polarization 𝑃r of PLBZT thin films is smaller than that of (Pb1−𝑥La𝑥)(Zr1−𝑦 Ti𝑦)O3 (PLZT) thin films without Bi doping. PLBZT thin films with excessive Bi-doping content are easier to fatigue than PLZT thin films.

    • Author Affiliations

       

      Hua Wang1 2 Li Liu1 Ji-Wen Xu1 2 Chang-Lai Yuan1 2 Ling Yang1

      1. School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541 004, China
      2. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541 004, China

    • Dates

       
      Published
      June 2013
      Manuscript received
      21 November 2011
      Manuscript revised
      31 July 2012

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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