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      https://www.ias.ac.in/article/fulltext/boms/036/02/0231-0237

    • Keywords

       

      Doped-zinc oxide; microstructure; optical parameters; electrical conductivity.

    • Abstract

       

      Thin metallic films of Zn and In/Zn were deposited onto glass substrates by thermal evaporation under vacuum. The metallic films were submitted to a thermal oxidation in air, at 623 K, for different oxidation times (30–90 min), in order to be oxidized. Structural andmorphological analyses (X-ray diffraction, transmission electron microscopy and scanning electron microscopy) revealed that the obtained undoped and In-doped ZnO thin films possess a polycrystalline structure. Transmission spectra were recorded in spectral domain from 280 to 1400 nm. The influence of In doping and oxidation parameters as well, on the optical parameters (transmittance, optical bandgap, Urbach energy) were analysed. It was clearly evidenced that by In doping, the optical properties of ZnO films were improved. The temperature dependence of electrical conductivity was studied using surface-type cells with Ag electrodes. The obtained results indicate that In-doped ZnO films exhibit an enhancement of electrical conductivity with few orders of magnitude when compared with non-doped ones.

    • Author Affiliations

       

      A P Rambu1 D Sirbu1 A V Sandu2 G Prodan3 V Nica1

      1. Alexandru Ioan Cuza University of Iasi, University of Iasi, Faculty of Physics, 11 Carol I Blvd., Iasi 700506, Romania
      2. Gheorghe Asachi Tech University, Faculty of Materials Science & Engineering, Iasi 700050, Romania
      3. “Ovidius”, University of Constanta, Bd. Mamaia 124, Constanta, Romania
    • Dates

       
  • Bulletin of Materials Science | News

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