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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/035/05/0885-0887

    • Keywords

       

      Zirconium nitride; ion beam sputtering; reactive; flow ratio.

    • Abstract

       

      In this study, zirconium nitride thin films were deposited on Si substrates by ion beam sputtering (IBS). Influence of N2/(N2+Ar) on the structural and physical properties of the films has been investigated with respect to the atomic ratio between nitrogen and zirconium. It was found that the thickness of layers decreased by increasing the F(N2). Moreover, crystalline plane peaks such as (111), (200) and (220) with (111) preferred orientation were observed due to strain energy which associate with (111) orientation in ZrN. Also, the fluctuation in nitrogen flow ratio results in colour and electrical resistivity of films.

    • Author Affiliations

       

      Shahab Norouzian1 2 Majid Mojtahedzadeh Larijani3 Reza Afzalzadeh2

      1. Physics Department, Iran University of Science and Technology, P.O. Box 16765-163, Tehran, Iran
      2. Physics Department, K. N. Toosi University of Technology, P.O. Box 16315-1618, Tehran, Iran
      3. Agricultural, Medical and Industrial Research School, P.O. Box 31485-498, Karaj, Iran
    • Dates

       

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