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      https://www.ias.ac.in/article/fulltext/boms/035/03/0365-0368

    • Keywords

       

      Organogermanium; germanium thin films; AACVD; XRD.

    • Abstract

       

      Diethyl germanium bis-picolinate, [Et2Ge(O2CC5H4N)2], and trimethyl germanium quinaldate, [Me3Ge(O2CC9H6N)], have been used as precursors for deposition of thin films of germanium by aerosol assisted chemical vapour deposition (AACVD). The thermogravimetric analysis revealed complete volatilization of complexes under nitrogen atmosphere. Germanium thin films were deposited on silicon wafers at 700°C employing AACVD method. These films on oxidation under an oxygen atmosphere at 600°C yield GeO2. Both Ge and GeO2 films were characterized by XRD, SEM and EDS measurements. Their electrical properties were assessed by current–voltage (𝐼–𝑉) characterization.

    • Author Affiliations

       

      Alpa Y Shah1 Amey Wadawale1 Vijaykumar S Sagoria1 Vimal K Jain1 C A Betty1 S Bhattacharya2

      1. Chemistry Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
      2. Technical Physics Division, Bhabha Atomic Research Centre, Mumbai 400 085, India
    • Dates

       
  • Bulletin of Materials Science | News

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