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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/034/07/1689-1692

    • Keywords

       

      Silicon; PECVD; passivation; AFM; H3PO4 etch.

    • Abstract

       

      In this study, we have improved electrical characteristics such as the efficiency (𝜂) and the fill factor (FF) of finished multicrystalline silicon (𝑚𝑐-Si) solar cells by using a new chemical treatment with a hot phosphoric (H3PO4) acidic solution. These 𝑚𝑐-Si solar cells were made by a standard industrial process with screen-printed contacts and a silicon nitride (SiN) antireflection coating. We have deposited SiN thin layer (80 nm) on 𝑝-type 𝑚𝑐-Si substrate by the mean of plasma enhanced chemical vapour deposition (PECVD) technique. The reactive gases used as precursors inside PECVD chamber are a mixture of silane (SiH4) and ammonia (NH3) at a temperature of 380°C. The developed H3PO4 chemical surface treatment has improved 𝜂 from 5.4 to 7.7% and FF from 50.4 to 70.8%, this means a relative increase of up to 40% from the initial values of 𝜂 and FF. In order to explain these improvements, physical (AFM, EDX), chemical (FTIR) and optical (spectrophotometer) analyses were done.

    • Author Affiliations

       

      A Mefoued1 2 M Fathi1 J Bhatt3 A Messaoud1 B Palahouane1 N Benrekaa2

      1. Silicon Technology Unit (UDTS), 02 Bd Frantz Fanon, BP. 140, Alger-7 Merveilles, Algiers, Algeria
      2. Houari Boumediene University of Science and Technology (USTHB), Bab Ezzouar, Algiers, Algeria
      3. SSN-Research Centre, Rajiv Gandhi Salai (OMR), Kalavakkam 603 110, India
    • Dates

       
  • Bulletin of Materials Science | News

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