This work describes the laser annealing of 𝑎-SiC and 𝑎-SiC𝑥N𝑦 films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of 𝑎-SiC𝑥N𝑦 thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiC𝑥N𝑦 films.
Volume 43, 2020
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