• Fulltext


        Click here to view fulltext PDF

      Permanent link:

    • Keywords


      Silicon carbide; silicon carbonitride; amorphous films; sputtering; laser annealing.

    • Abstract


      This work describes the laser annealing of 𝑎-SiC and 𝑎-SiC𝑥N𝑦 films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of 𝑎-SiC𝑥N𝑦 thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiC𝑥N𝑦 films.

    • Author Affiliations


      M A Fraga1 M Massi1 I C Oliveira1 F D Origo2 W Miyakawa2

      1. Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil
      2. Institute for Advanced Studies, SJ dos Campos, Brazil
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2022-2023 Indian Academy of Sciences, Bengaluru.