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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/034/07/1375-1378

    • Keywords

       

      Silicon carbide; silicon carbonitride; amorphous films; sputtering; laser annealing.

    • Abstract

       

      This work describes the laser annealing of 𝑎-SiC and 𝑎-SiC𝑥N𝑦 films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of 𝑎-SiC𝑥N𝑦 thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiC𝑥N𝑦 films.

    • Author Affiliations

       

      M A Fraga1 M Massi1 I C Oliveira1 F D Origo2 W Miyakawa2

      1. Plasmas and Processes Laboratory, Technological Institute of Aeronautics, SJ dos Campos, Brazil
      2. Institute for Advanced Studies, SJ dos Campos, Brazil
    • Dates

       
  • Bulletin of Materials Science | News

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