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Ga₂O₃ nanostructures; nitrogen doping; white light emission; growth mechanism.

N-doped monoclinic Ga₂O₃ nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150°C to 1350°C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped Ga₂O₃ nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the Ga₂O₃ nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.

S C Vanithakumari¹ K K Nanda¹

1. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India

Published

December 2011

Manuscript received

30 November 2009