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      https://www.ias.ac.in/article/fulltext/boms/033/03/0221-0226

    • Keywords

       

      Nitrides; nano-flowers; photoluminescence; RF–MBE.

    • Abstract

       

      Nanosized hexagonal InN flower-like structures were fabricated by droplet epitaxy on GaN/Si(111) and GaN flower-like nanostructure fabricated directly on Si(111) substrate using radio frequency plasma-assisted molecular beam epitaxy. Powder X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the crystallinity and morphology of the nanostructures. Moreover, X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) were used to investigate the chemical compositions and optical properties of nano-flowers, respectively. Activation energy of free exciton transitions in GaN nano-flowers was derived to be ∼ 28.5 meV from the temperature dependent PL studies. The formation process of nanoflowers is investigated and a qualitative mechanism is proposed.

    • Author Affiliations

       

      Mahesh Kumar1 2 T N Bhat1 M K Rajpalke1 B Roul1 2 P Misra3 L M Kukreja3 Neeraj Sinha4 A T Kalghatgi2 S B Krupanidhi1

      1. Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India
      2. Central Research Laboratory, Bharat Electronics, Bangalore 560 013, India
      3. Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013, India
      4. Office of Principal Scientific Advisor, Government of India, New Delhi 110 011, India
    • Dates

       
  • Bulletin of Materials Science | News

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