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Chemical solution deposition of CaCu3Ti4O12 thin film
Viswanathan S Saji Han Cheol Choe
Thin Films and Nanomatter Volume 33 Issue 3 June 2010 pp 203-207
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https://www.ias.ac.in/article/fulltext/boms/033/03/0203-0207 -
Keywords
CaCu3Ti4O12 ;thin film ;chemical solution deposition ;dielectric properties. -
Abstract
CaCu3Ti4O12 (CCTO) thin film was successfully deposited on boron doped silica substrate by chemical solution deposition and rapid thermal processing. The phase and microstructure of the deposited films were studied as a function of sintering temperature, employing X-ray diffractometry and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using impedance spectroscopy. Polycrystalline pure phase CCTO thin films with (220) preferential orientation was obtained at a sintering temperature of 750°C. There was a bimodal size distribution of grains. The dielectric constant and loss factor at 1 kHz obtained for a film sintered at 750°C was 𝑘 ∼ 2000 and tan 𝛿 ∼ 0.05.
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Author Affiliations
Viswanathan S Saji1 Han Cheol Choe1
- Chosun University, College of Dentistry and 2nd Stage of Brain Korea 21 for College of Dentistry, Gwangju 501-759, Republic of Korea
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Dates
- Published
- June 2010
- Manuscript received
- 24 November 2008
- Manuscript revised
- 25 January 2010
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Bulletin of Materials Science
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