ZnO nanorods have been synthesized over etch-patterned Si (110) wafer using annealed silver thin film as growth catalyst. The growth of ZnO nanorods were performed by a two-step process. Initially, the deposition of Zn thin film was done on the annealed silver catalyst film over etch-patterned Si (110) substrate by thermal evaporation, and then annealed at 800°C in air. The etching of the patterned Si (110) wafers was carried out by 50% aqueous KOH solution. The samples were investigated by optical microscopy, scanning electron microscopy, X-ray diffraction, Raman spectroscopy and room temperature photoluminescence spectroscopy. `V’ shaped grooves with no undercut were formed after etching due to the anisotropic nature of the KOH etchant. The etch-patterned wafer was used to provide larger surface area for ZnO growth by forming `V’-grooves. This ZnO film may be predicted as a very good material for gas sensor.
Volume 43, 2020
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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