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    • Keywords


      Metal–semiconductor nanojunctions; rectification characteristics; nanostructure systems; singlewalled carbon nanotubes.

    • Abstract


      Junctions of silver–copper oxide and silver–zinc oxide, respectively were prepared within the pores of diameters, 20 nm, in anodic aluminium oxide membranes. Voltage–current characteristics were measured over the temperature range 373–573 K which showed rectification behaviour. Using the standard equation the difference between the work functions of the metal and the semiconductor was calculated. This showed a variation with the temperature of measurement. This is explained as arising due to the effect of pressure generated as a result of thermal expansion of the metallic phases concerned between the electrodes. This is consistent with the theoretical prediction of Fermi level shifting of the semiconductor within the bandgap as a function of pressure.

    • Author Affiliations


      Anindita Bose1 Kuntal Chatterjee2 Dipankar Chakravorty1

      1. DST Unit on Nano Science, Indian Association for the Cultivation of Science, Kolkata 700 032, India
      2. Department of Physics, Vidyasagar University, Midnapore 721 102, India
    • Dates

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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