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    • Keywords


      Laser-induced etching; intermediate state; nanostructure; SEM; AFM.

    • Abstract


      The laser induced etching of semi-insulating GaAs $\langle$100$\rangle$ is carried out to create porous structure under super- and sub-bandgap photon illumination (ℎν). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy (AFM).

    • Author Affiliations


      B Joshi1 S S Islam1 H S Mavi2 Vinita Kumari1 T Islam3 A K Shukla2 Harsh4

      1. Department of Applied Sciences and Humanities, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, India
      2. Department of Physics, Indian Institute of Technology, New Delhi 110 016, India
      3. Department of Electrical Engineering, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, India
      4. Solid State Physics Laboratory (DRDO), Lucknow Road, Delhi 110 054, India
    • Dates

  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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