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Electroless deposition; X-ray diffraction; scanning probe microscopy; nickel film.

Electroless deposition of nickel (EN) films on 𝑛-type silicon has been investigated under different process conditions. The interface between the film and substrate has been characterized for electrical properties by probing the contact resistances. X-ray diffraction and atomic force microscopy have been performed to obtain information about the structural and morphological details of the films. As a comparative study, nickel films have also been sputter deposited on silicon substrates. An as-deposited electroless film is observed to form non-ohmic contact while in a sputtered film prepared without the application of substrate heating, the formation of metal–insulating–semiconductor type junction is seen.

Subir Sabharwal^{1 2} Siddharth Palit¹ R B Tokas³ A K Poswal⁴ Sangeeta⁴

1. Department of Metallurgical & Materials Engineering, Indian Institute of Technology, Roorkee 247 667, India
2. Department of Physics, Columbia University, New York, USA
3. Spectroscopy Division, TPPED, Bhabha Atomic Research Centre, Mumbai 400 085, India
4. Crystal Technology Laboratory, TPPED, Bhabha Atomic Research Centre, Mumbai 400 085, India

Published

October 2008

Manuscript received

9 December 2007

Manuscript revised

31 March 2008