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Electroless deposition, post annealing and characterization of nickel films on silicon
Subir Sabharwal Siddharth Palit R B Tokas A K Poswal Sangeeta
Thin Films Volume 31 Issue 5 October 2008 pp 729-736
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https://www.ias.ac.in/article/fulltext/boms/031/05/0729-0736 -
Keywords
Electroless deposition ;X-ray diffraction ;scanning probe microscopy ;nickel film. -
Abstract
Electroless deposition of nickel (EN) films on 𝑛-type silicon has been investigated under different process conditions. The interface between the film and substrate has been characterized for electrical properties by probing the contact resistances. X-ray diffraction and atomic force microscopy have been performed to obtain information about the structural and morphological details of the films. As a comparative study, nickel films have also been sputter deposited on silicon substrates. An as-deposited electroless film is observed to form non-ohmic contact while in a sputtered film prepared without the application of substrate heating, the formation of metal–insulating–semiconductor type junction is seen.
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Author Affiliations
Subir Sabharwal1 2 Siddharth Palit1 R B Tokas3 A K Poswal4 Sangeeta4
- Department of Metallurgical & Materials Engineering, Indian Institute of Technology, Roorkee 247 667, India
- Department of Physics, Columbia University, New York, USA
- Spectroscopy Division, TPPED, Bhabha Atomic Research Centre, Mumbai 400 085, India
- Crystal Technology Laboratory, TPPED, Bhabha Atomic Research Centre, Mumbai 400 085, India
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Dates
- Published
- October 2008
- Manuscript received
- 9 December 2007
- Manuscript revised
- 31 March 2008
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