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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/031/03/0467-0471

    • Keywords

       

      Nanocrystalline silicon; helium dilution; wide optical gap; RF glow discharge.

    • Abstract

       

      Growth and optimization of the nanocrystalline silicon (nc-Si : H) films have been studied by varying the electrical power applied to the helium diluted silane plasma in RF glow discharge. Wide optical gap and conducting intrinsic nanocrystalline silicon network of controlled crystalline volume fraction and oriented crystallographic lattice planes have been obtained at a reasonably high growth rate from helium diluted silane plasma, without using hydrogen. Improving crystallinity in the network comprising ∼ 10 nm Si-nanocrystallites and contributing optical gap widening, conductivity ascending and that obtained during simultaneous escalation of the deposition rate, promises significant technological impact.

    • Author Affiliations

       

      Koyel Bhattacharya1 Debajyoti Das1

      1. Energy Research Unit, Indian Association for the Cultivation of Science, Kolkata 700 032, India
    • Dates

       
  • Bulletin of Materials Science | News

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