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Indium; indium nitride; plasma annealing.

In the present study, a novel method involving nitrogen plasma annealing has been reported for preparing InN nanoparticle/nanorod structures and for improving the properties of InN nanoparticle layers. Plasma annealed structures have been characterized by X-ray diffraction, atomic force microscopy and photoluminescence spectroscopy techniques. InN nanoparticle layers have been prepared using activated reactive evaporation set up. It has been observed that there is a remarkable improvement in the conductivity and crystallinity of InN nanoparticle layers on annealing in nitrogen plasma. This has been attributed to the increase in the nitrogen content of the samples. Experiments involving plasma annealing of In nanorods deposited oxide template has also been carried out. It was found that on plasma treatment In nanorods get converted to mixed phase InN nanorods with hexagonal and cubic fractions.

Ajay Kumar Mann¹ Deepak Varandani¹ Bodh Raj Mehta¹ Lalit Kumar Malhotra¹ G Mangamma² A K Tyagi²

1. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110 016, India
2. Material Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603 102, India