Si-doped GaN films in polycrystalline form were deposited on quartz substrates at deposition temperatures ranging from 300–623 K using r.f. sputtering technique. Electrical, optical and microstructural properties were studied for these films. It was observed that films deposited at room temperature contained mainly hexagonal gallium nitride (ℎ-GaN) while films deposited at 623 K were predominantly cubic (𝑐-GaN) in nature. The films deposited at intermediate temperatures were found to contain both the hexagonal and cubic phases of GaN. Studies on the variation of conductivity with temperature indicated Mott’s hopping for films containing 𝑐-GaN while Efros and Shklovskii (E–S) hopping within the Coulomb gap was found to dominate the carrier transport mechanism in the films containing ℎ-GaN. A crossover from Mott’s hopping to E–S hopping in the `soft’ Coulomb gap was noticed with lowering of temperature for films containing mixed phases of GaN. The relative intensity of the PL peak at ∼ 2.73 eV to that for peak at ∼ 3.11 eV appearing due to transitions from deep donor to valence band or shallow acceptors decreased significantly at higher temperature. Variation of band gap showed a bowing behaviour with the amount of cubic phase present in the films.
Volume 43, 2020
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