• Etching of GaAs substrates to create As-rich surface

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    • Keywords


      Etching; semi-insulating; XPS spectrum.

    • Abstract


      Several different cleaning procedures for GaAs (100) substrates are compared using X-ray photoelectron spectroscopy and optical microscopy. This work emphasizes the effect of the last etching step: using either HCl, HF–ethanol (5%) or static deionized water after HCl cleaning. All the procedures except HCl solution (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As-rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions.

    • Author Affiliations


      A Chanda1 S Verma2 C Jacob1

      1. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India
      2. Institute of Physics, Bhubaneswar 751 005, India
    • Dates

  • Bulletin of Materials Science | News

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      Posted on July 25, 2019

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