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      https://www.ias.ac.in/article/fulltext/boms/030/06/0547-0551

    • Keywords

       

      CdSe films; electron beam evaporation; structural properties; energy band gap.

    • Abstract

       

      Thin films of cadmium selenide (CdSe) as a semiconductor is well suited for opto-electronic applications such as photo detection or solar energy conversion, due to its optical and electrical properties, as well as its good chemical and mechanical stability. In order to explore the possibility of using this in optoelectronics, a preliminary and thorough study of optical and structural properties of the host material is an important step. Based on the above view, the structural and optical properties of CdSe films have been studied thoroughly in the present work. The host material, CdSe film, has been prepared by the physical vapour deposition method of electron beam evaporation (PVD: EBE) technique under a pressure of 5 × 10-5 mbar. The structural properties have been studied by XRD technique. The hexagonal structure with a preferred orientation along the (0 0 2) direction of films has been confirmed by the X-ray diffraction analysis. The films have been analysed for optical band gap and absorbed a direct intrinsic band gap of 1.92 eV.

    • Author Affiliations

       

      N J Suthan Kissinger1 M Jayachandran2 K Perumal3 C Sanjeevi Raja4

      1. Nesamony Memorial Christian College, Marthandam 629 165, India
      2. ECMS Division, Central Electrochemical Research Institute, Karaikudi 630 006, India
      3. SRMV College of Arts & Science, Coimbatore 641 020, India
      4. Alagappa University, Karaikudi 630 003, India
    • Dates

       
  • Bulletin of Materials Science | News

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