• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/030/05/0477-0480

    • Keywords

       

      Polyethersulfone; microhardness; conductivity; dielectric response; FTIR.

    • Abstract

       

      Polyethersulfone (PES) films were irradiated with 3 MeV proton beams in the fluence range 1013–1015 ions/cm2. The radiation induced changes in microhardness was investigated by a Vickers’ microhardness tester in the load range 100–1000 mN and electrical properties in the frequency range 100 Hz–1 MHz by an LCR meter. It is observed that microhardness of the film increases significantly as fluence increases up to 1014 ions/cm2. The bulk hardness of the films is obtained at a load of 400 mN. The increase in hardness may be attributed to the cross linking effect. There is an exponential increase in conductivity with log frequency and the effect of irradiation is significant at higher fluences. The dielectric constant/loss is observed to change significantly due to irradiation. It has been found that dielectric response in both pristine and irradiated samples obey the Universal law and is given by 𝜀 ∝ 𝑓n–1. These results were corroborated with structural changes observed in FTIR spectra of irradiated samples.

    • Author Affiliations

       

      Nilam Shah1 Dolly Singh1 Sejal Shah1 Anjum Qureshi1 N L Singh1 K P Singh2

      1. Department of Physics, M.S. University of Baroda, Vadodara 390 002, India
      2. Department of Physics, Punjab University, Chandigarh 160 014, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.