The present work deals with the mixing of iron and silicon by swift heavy ions in high-energy range. The thin film was deposited on a 𝑛-Si (111) substrate at 10-6 torr and at room temperature. Irradiations were undertaken at room temperature using 120 MeV Au+9 ions at the Fe/Si interface to investigate ion beam mixing at various doses: 5 × 1012 and 5 × 1013 ions/cm2. Formation of different phases of iron silicide has been investigated by X-ray diffraction (XRD) technique, which shows enhancement of intermixing and silicide formation as a result of irradiation. 𝐼–𝑉 measurements for both pristine and irradiated samples have been carried out at room temperature, series resistance and barrier heights for both as deposited and irradiated samples were extracted. The barrier height was found to vary from 0.73–0.54 eV. The series resistance varied from 102.04–38.61 k𝛺.
Volume 45, 2022
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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