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    • Electrical properties of chemically prepared nonstoichiometric CuIn(S,Se)2 thin films

      R H Bari L A Patil A Soni G S Okram

      Thin Films Volume 30 Issue 2 April 2007 pp 135-139

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/030/02/0135-0139

    • Keywords

       

      CuIn(S,Se)2; thin films; chemical bath deposition technique; d.c. conductivity; thermoelectric power.

    • Abstract

       

      Polycrystalline thin films of copper indium sulphoselenide [CuIn(S,Se)2] were deposited on glass substrate by chemical bath deposition technique. The deposition parameters such as pH, temperature and time were optimized. A set of films having different elemental compositions was prepared by varying Cu/In ratio from 1.87–12.15. The films were characterized by X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDAX). The chemical composition of the CuIn(S,Se)2 was found to be nonstoichiometric. The d.c. conductivities of the films were studied below and near room temperature. The thermo-electric power of the films was also measured and type of semiconductivity was ascertained.

    • Author Affiliations

       

      R H Bari1 L A Patil1 A Soni2 G S Okram2

      1. P.G. Department of Physics, Pratap College, Amalner 425 401, India
      2. UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001, India

    • Dates

       
      Published
      April 2007
      Manuscript received
      27 November 2006
      Manuscript revised
      20 February 2007

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