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      https://www.ias.ac.in/article/fulltext/boms/029/07/0653-0657

    • Keywords

       

      Thin films; Al–Sb; ion irradiation; absorption; RBS; optical band gap.

    • Abstract

       

      Al–Sb bilayer thin films having various thicknesses were deposited by thermal evaporation on ITO-coated conducting glass substrates at a pressure of 10-5 torr. These films were irradiated by Ag12+ heavy ions of energy, 160 MeV, with a fluence of 2.2 × 1013 ions/cm2, to get aluminum antimonide semiconductor. Rutherford back scattering and optical band gap data confirmed mixing of bilayer to form the semi-conducting system.

    • Author Affiliations

       

      R K Mangal1 M Singh1 Y K Vijay1 D K Avasthi2

      1. Department of Physics, University of Rajasthan, Jaipur 302 004, India
      2. Nuclear Science Centre, Aruna Asaf Ali Marg, New Delhi 110 067, India
    • Dates

       
  • Bulletin of Materials Science | News

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