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    • Role of spin polarized tunneling in magnetoresistance and low temperature minimum of polycrystalline La1–𝑥K𝑥MnO3 (𝑥 = 0.05, 0.1, 0.15) prepared by pyrophoric method

      Soma Das T K Dey

      Volume 29 Issue 6 November 2006 pp 633-636

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      https://www.ias.ac.in/article/fulltext/boms/029/06/0633-0636

    • Keywords

       

      Manganites; magnetoresistance; low temperature resistivity; spin polarized tunneling.

    • Abstract

       

      The low temperature resistivity and magnetoresistance of bulk samples of La1–𝑥K𝑥MnO3 has been investigated between 10 K and 300 K with and without the magnetic field (𝐻 = 0.8 T). All the samples show metal–insulator transitions with Curie temperature (𝑇C) ranging between 260 K and 309 K. At temperature below 60 K, the K-doped manganites exhibit a shallow minimum, which disappears under an applied field of 0.8 T. This field dependent minimum in resistivity, observed in K-doped lanthanum manganites is explained in the light of intergrain tunneling of the charge carriers between anti-ferromagnetically coupled grains of the polycrystalline samples. The field variation of magnetoresistance below 𝑇C follows a phenomenological model which considers spin polarized tunneling at the grain boundaries. The intergranular contribution to the magnetoresistance is separated out from that due to spin polarized tunneling part at the grain boundaries. The temperature dependence of intrinsic contribution to the magnetoresistance follows the prediction of the double exchange model for all values of field at 𝑇 < 𝑇C.

    • Author Affiliations

       

      Soma Das1 T K Dey1

      1. Cryogenic Engineering Centre, Indian Institute of Technology, Kharagpur 721 302, India

    • Dates

       
      Published
      November 2006

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