Group III–V compound B–Sb films were synthesized from B/Sb/…/B multilayer films deposited by electron gun evaporation onto silicon substrate and subjecting the above multilayer to rapid thermal annealing at 773 K for 3 min. The films were characterized by XRD, TEM, XPS and optical studies. XPS studies indicated the ratio of B : Sb ∼1. XRD and electron diffraction patterns indicated the reflections from (100), (111), (102) and (112) planes of zinc blende BSb. Band gap evaluated from optical studies was ∼ 0.51 eV. Refractive index of the films varied between 1.65 and 2.18 with increasing energy of incident photon and plasma frequency (𝜔p) was estimated to be ∼ 2.378 × 10-14 s-1. The effective mass was computed to be ∼ 0.0845 m𝑒.
Volume 44, 2021
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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