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    • Structural, optical and electrical properties of chemically deposited nonstoichiometric copper indium diselenide films

      R H Bari L A Patil P P Patil

      Thin Films Volume 29 Issue 5 October 2006 pp 529-534

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/029/05/0529-0534

    • Keywords

       

      Copper indium diselenide; thin films; chemical bath deposition; non-stoichiometry.

    • Abstract

       

      Thin films of copper indium diselenide (CIS) were prepared by chemical bath deposition technique onto glass substrate at temperature, 60°C. The studies on composition, morphology, optical absorption, electrical conductivity and structure of the films were carried out and discussed. Characterization included X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), energy dispersive X-ray analysis (EDAX) and absorption spectroscopy. The results are discussed and interpreted.

    • Author Affiliations

       

      R H Bari1 L A Patil1 P P Patil2

      1. P.G. Department of Physics, Pratap College, Amalner 425 401, India
      2. Department of Physical Sciences, North Maharashtra University, Jalgaon 425 001, India

    • Dates

       
      Published
      October 2006
      Manuscript received
      5 June 2006
      Manuscript revised
      31 July 2006

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