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    • Influence of bismuth on properties and microstructures of Sr0.5Ba0.5–𝑥Bi𝑥 TiO3 thin films

      Tao Wenhong Wang Yin Fu Xinghua Wei Qihong

      Thin Films Volume 29 Issue 5 October 2006 pp 523-527

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/029/05/0523-0527

    • Keywords

       

      BST thin films; dielectric constant; dielectric loss; Bi dopant; characteristic microstructure.

    • Abstract

       

      The influence of bismuth (Bi) on the dielectric and ferroelectric properties of Sr0.5Ba0.5–𝑥Bi𝑥 TiO3 (BST, 0 < 𝑥 < 0.030 mol) thin films was studied. The results showed that the dielectric constant (𝜀r) and dielectric loss (tan 𝛿) decreased, and temperature, 𝑇m, for maximum and 𝜀r (Curie temperature), moved to lower temperature with increasing Bi content. The 𝑃r, 𝑃s and 𝐸c were 0.22 𝜇C/cm2, 0.32 𝜇C/cm2 and 60 kV/cm, respectively for Sr0.5Ba0.485Bi0.015TiO3 thin films measured at 100 Hz, 20 V. The microstructure of BST thin films was studied by XRD and TEM. Tetragonal perovskite grains existed in BST thin films, but the grain size decreased with increasing doping ratio in BST. The characteristic absorption band for octahedron [TiO2] (471.65 cm-1) was shifted to lower wave number.

    • Author Affiliations

       

      Tao Wenhong1 Wang Yin2 Fu Xinghua1 Wei Qihong1

      1. Department of Materials Science and Engineering, Jinan University, Jinan 250022, PR China
      2. Department of Foreign Languages, Jinan University, Jinan 250022, PR China

    • Dates

       
      Published
      October 2006
      Manuscript received
      3 December 2005
      Manuscript revised
      9 August 2006

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