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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/029/02/0101-0105

    • Keywords

       

      Ion micro-beam; pattern generation; PtBA polymer; Ge on polymers.

    • Abstract

       

      Proton beam lithography has made it possible to make various types of 3D-structures in polymers. Usually PMMA, SU-8, PS polymers have been used as resist materials for lithographic purpose. Microbeam irradiation effects on poly-tert-butyl-acrylate (PtBA) polymer using 2.0 MeV proton microbeam are reported. Preliminary results on pattern formation on PtBA are carried out as a function of fluence. After writing the pattern, a thin layer of Ge is deposited. Distribution of Ge in pristine and ion beam patterned surface of PtBA polymer is studied using the optical and secondary electron microscopic experimental methods.

    • Author Affiliations

       

      J Kamila1 S Roy2 K Bhattacharjee2 B Rout3 B N Dev2 R Guico4 J Wang4 A W Haberl5 P Ayyub6 P V Satyam2

      1. Department of Physics, B.J.B. Junior College, Bhubaneswar 751 014, India
      2. Institute of Physics, Sachivalaya Marg, Bhubaneswar 751 005, India
      3. Louisiana Accelerator Centre, PO Box 42410, Layette, LA-70504, USA
      4. Advance Photon Source, Argonne National Laboratory, Argonne, IL-60439, USA
      5. Department of Physics, University at Albany, Albany, NY 12222, USA
      6. DCMP&MS, Tata Institute of Fundamental Research, Mumbai 400 005, India

    • Dates

       
      Published
      April 2006
      Manuscript received
      13 November 2004

  • Bulletin of Materials Science | News

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