• Optical, electrical and thermoelectric power studies of Al–Sb thin film bilayer structure

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    • Keywords


      Annealing; interdiffusion; semiconductor; bilayer; RBS.

    • Abstract


      The III–V semiconductors are of great importance due to their applications in various electro-optic devices. The Al–Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al–Sb thin films are 𝑝-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.

    • Author Affiliations


      M Singh1 J S Arora1 Y K Vijay1 M Sudharshan2

      1. Department of Physics, University of Rajasthan, Jaipur 302 004, India
      2. IUC-DAE, Kolkata Centre, Bidhan Nagar, Kolkata 700 091, India
    • Dates

  • Bulletin of Materials Science | News

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