The III–V semiconductors are of great importance due to their applications in various electro-optic devices. The Al–Sb thin film was deposited on glass substrate by thermal evaporation method at a pressure of 10-5 torr. The samples were annealed for 3 h at different constant temperatures in a vacuum chamber at a pressure of 10-5 torr. The electrical resistance vs temperature studies show phase transformation from metallic to semiconducting. The observed positive thermoelectric power indicates that Al–Sb thin films are 𝑝-type in nature. The Rutherford back scattering analysis and optical band gap measurements also indicate that the interdiffusion concentration varies with temperature.
Volume 43, 2020
Continuous Article Publishing mode
Click here for Editorial Note on CAP Mode