The preparation of indium doped zinc oxide films is discussed. Variation of structural, electrical and optical properties of the films with zinc acetate concentration and indium concentration in the solution are investigated. XRD studies have shown a change in preferential orientation from (002) to (101) crystal plane with increase in indium dopant concentration. Films deposited at optimum conditions have a low resistivity of 1.33 × 10-4 𝛺m with 94% transmittance at 550 nm. SEM studies have shown smooth polycrystalline morphology of the films. Figure of merit is evaluated from electrical resistivity and transmittance data.
Volume 43, 2020
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