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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/028/05/0405-0410

    • Keywords

       

      ZrSe3 single crystal; optical band gap; resistivity; Hall parameters; Bridgman anvil cell.

    • Abstract

       

      Single crystals of the lamellar compound, ZrSe3, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450 nm. The indirect as well as direct band gap of ZrSe3 were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe3 single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail.

    • Author Affiliations

       

      Kaushik Patel1 Jagdish Prajapati1 Rajiv Vaidya1 S G Patel1

      1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India

    • Dates

       
      Published
      August 2005
      Manuscript received
      22 April 2004
      Manuscript revised
      29 April 2005

  • Bulletin of Materials Science | News

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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

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