Click here to view fulltext PDF

Permanent link:
https://www.ias.ac.in/article/fulltext/boms/028/05/0405-0410

ZrSe₃ single crystal; optical band gap; resistivity; Hall parameters; Bridgman anvil cell.

Single crystals of the lamellar compound, ZrSe₃, were grown by chemical vapour transport technique using iodine as a transporting agent. The grown crystals were characterized with the help of energy dispersive analysis by X-ray (EDAX), which gave confirmation about the stoichiometry. The optical band gap measurement of as grown crystals was carried out with the help of optical absorption spectra in the range 700–1450 nm. The indirect as well as direct band gap of ZrSe₃ were found to be 1.1 eV and 1.47 eV, respectively. The resistivity of the as grown crystals was measured using van der Pauw method. The Hall parameters of the grown crystals were determined at room temperature from Hall effect measurements. Electrical resistivity measurements were performed on this crystal in the temperature range 303–423 K. The crystals were found to exhibit semiconducting nature in this range. The activation energy and anisotropy measurements were carried out for this crystal. Pressure dependence of electrical resistance was studied using Bridgman opposed anvils set up up to 8 GPa. The semiconducting nature of ZrSe₃ single crystal was inferred from the graph of resistance vs pressure. The results obtained are discussed in detail.

Kaushik Patel¹ Jagdish Prajapati¹ Rajiv Vaidya¹ S G Patel¹

1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India

Published

August 2005

Manuscript received

22 April 2004

Manuscript revised

29 April 2005