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Growth and characterization of Hg1–𝑥Cd𝑥Te epitaxial films by isothermal vapour phase epitaxy (ISOVPE)
Manju Malhotra Madhukar Gautam J K Radhakrishnan Vinod Kapoor Sudeep Verma Upendra Kumar Anand Kumar Garima Gupta Anshu Goyal S Sitharaman
Semiconductors Volume 28 Issue 2 April 2005 pp 97-102
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https://www.ias.ac.in/article/fulltext/boms/028/02/0097-0102 -
Keywords
MCT ;epitaxy ;characterization ;vapour phase. -
Abstract
Growth of Hg1–𝑥Cd𝑥Te epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance–voltage (𝐶–𝑉) measurements.
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Author Affiliations
Manju Malhotra1 Madhukar Gautam1 J K Radhakrishnan1 Vinod Kapoor1 Sudeep Verma1 Upendra Kumar1 Anand Kumar1 Garima Gupta1 Anshu Goyal1 S Sitharaman1
- Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, India
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Dates
- Published
- April 2005
- Manuscript received
- 20 September 2004
- Manuscript revised
- 5 February 2005
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Bulletin of Materials Science
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