Growth and characterization of Hg1–𝑥Cd𝑥Te epitaxial films by isothermal vapour phase epitaxy (ISOVPE)
Manju Malhotra Madhukar Gautam J K Radhakrishnan Vinod Kapoor Sudeep Verma Upendra Kumar Anand Kumar Garima Gupta Anshu Goyal S Sitharaman
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Growth of Hg1–𝑥Cd𝑥Te epitaxial films by a new technique called asymmetric vapour phase epitaxy (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication have been successfully solved. The epitaxial films have been electrically characterized by using the Hall effect and capacitance–voltage (𝐶–𝑉) measurements.
Manju Malhotra1 Madhukar Gautam1 J K Radhakrishnan1 Vinod Kapoor1 Sudeep Verma1 Upendra Kumar1 Anand Kumar1 Garima Gupta1 Anshu Goyal1 S Sitharaman1
Volume 46, 2023
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Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
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