The fabrication method, technology route and structure performances of (Sr, Ba) TiO3 (SBT) ferroelectric thin film have been summarized in this paper. The tunability of dielectric constant, dielectric loss and leakage current are the basic parameters of tunable microwave devices. The thin films of SBT with high properties could be fabricated by means of RF magnetron sputtering and sol–gel processing. The electrical performances of thin film material can be improved largely by dopants. Some problems are put forward to pay attention to this material research process.
Volume 42 | Issue 3