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Progress of (Sr, Ba) TiO3 ferroelectric thin film and tunability
Fu Xinghua Shan Lianwei Ding Biyan Hou Wenping Fang Zhou Fu Zhengyi
Thin Films Volume 27 Issue 5 October 2004 pp 433-439
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https://www.ias.ac.in/article/fulltext/boms/027/05/0433-0439 -
Keywords
(Sr, Ba) TiO3 ;ferroelectric thin films ;sol–gel ;tunability ;dielectric loss. -
Abstract
The fabrication method, technology route and structure performances of (Sr, Ba) TiO3 (SBT) ferroelectric thin film have been summarized in this paper. The tunability of dielectric constant, dielectric loss and leakage current are the basic parameters of tunable microwave devices. The thin films of SBT with high properties could be fabricated by means of RF magnetron sputtering and sol–gel processing. The electrical performances of thin film material can be improved largely by dopants. Some problems are put forward to pay attention to this material research process.
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Author Affiliations
Fu Xinghua1 Shan Lianwei1 Ding Biyan1 Hou Wenping1 Fang Zhou2 Fu Zhengyi2
- Department of Materials Science and Engineering, Jinan University, Jinan 250022, PR China
- The State Key Laboratory of Material Composite and Advanced Technology, Wuhan University of Technology, Wuhan 430070, PR China
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Dates
- Published
- October 2004
- Manuscript received
- 17 March 2003
- Manuscript revised
- 11 June 2004
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