Bulletin of Materials Science | Indian Academy of Sciences

1. Home
2. Journals
3. Bulletin of Materials Science
4. Volume 27
5. Issue 2
- High pressure effect on MoS₂ and MoSe₂ single crystals grown by CVT method
  
  Madhavi Dave Rajiv Vaidya S G Patel A R Jani
  
  High Pressure Studies Volume 27 Issue 2 April 2004 pp 213-216
- Fulltext
  
  Click here to view fulltext PDF
  
  Permanent link:
  https://www.ias.ac.in/article/fulltext/boms/027/02/0213-0216
- Keywords
  
  Single crystals; chemical vapour transport technique; high pressure.
- Abstract
  
  Single crystals of MoS₂ and MoSe₂ were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS₂ and MoSe₂ do not undergo any structural transitions under pressure.
- Author Affiliations
  Madhavi Dave¹ Rajiv Vaidya¹ S G Patel¹ A R Jani¹
  1. Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India
- Dates
  
  Published
  April 2004
  Manuscript received
  4 December 2003
  Manuscript revised
  13 February 2004

Bulletin of Materials Science

Volume 45, 2022
All articles
Continuous Article Publishing mode

Bulletin of Materials Science | News
- Dr Shanti Swarup Bhatnagar for Science and Technology
  
  Posted on October 12, 2020
  
  Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
  Chemical Sciences 2020
  
  Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
  Physical Sciences 2020
- Editorial Note on Continuous Article Publication
  
  Posted on July 25, 2019
  
  Click here for Editorial Note on CAP Mode

© 2021-2022 Indian Academy of Sciences, Bengaluru.

Contact | Site index