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      https://www.ias.ac.in/article/fulltext/boms/026/07/0693-0697

    • Keywords

       

      ZnO; TEOS; border trap density; AFM; hysteresis.

    • Abstract

       

      Thin films of silicon dioxide are deposited on ZnO/𝑛-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO/𝑛-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (𝑄bt) and fixed oxide charge density (𝑄f/𝑞) of the SiO2/ZnO/𝑛-Si films are found to be 3.9 × 1010 cm-2 and 1.048 × 1011 cm-2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler–Nordheim (F–N) constant current stressing.

    • Author Affiliations

       

      S K Nandi1 S Chatterjee1 S K Samanta1 P K Bose2 C K Maiti1

      1. Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, India
      2. Department of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India
    • Dates

       
  • Bulletin of Materials Science | News

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