Thin films of silicon dioxide are deposited on ZnO/𝑛-Si substrate at a low temperature using tetraethylorthosilicate (TEOS). The ZnO/𝑛-Si films have been characterized by atomic force microscopy (AFM) and scanning electron microscopy (SEM). The border trap density (𝑄bt) and fixed oxide charge density (𝑄f/𝑞) of the SiO2/ZnO/𝑛-Si films are found to be 3.9 × 1010 cm-2 and 1.048 × 1011 cm-2, respectively. The trapping characteristics and stress induced leakage current (SILC) have also been studied under Fowler–Nordheim (F–N) constant current stressing.
Volume 43, 2020
Continuous Article Publishing mode
Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
Chemical Sciences 2020
Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
Physical Sciences 2020
Click here for Editorial Note on CAP Mode