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    • Influence of growth parameters on the surface morphology and crystallinity of InSb epilayers grown by liquid phase epitaxy

      N K Udayashankar H L Bhat

      Thin Films Volume 26 Issue 7 December 2003 pp 685-692

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/026/07/0685-0692

    • Keywords

       

      Liquid phase epitaxy; ramp cooling; step-cooling; surface morphology.

    • Abstract

       

      Unintentionally doped homoepitaxial InSb films have been grown by liquid phase epitaxy employing ramp cooling and step cooling growth modes. The effect of growth temperature, degree of supercooling and growth duration on the surface morphology and crystallinity were investigated. The major surface features of the grown film like terracing, inclusions, meniscus lines, etc are presented step-by-step and a variety of methods devised to overcome such undesirable features are described in sufficient detail. The optimization of growth parameters have led to the growth of smooth and continuous films. From the detailed morphological, X-ray diffraction, scanning electron microscopic and Raman studies, a correlation between the surface morphology and crystallinity has been established.

    • Author Affiliations

       

      N K Udayashankar1 H L Bhat2

      1. Department of Physics, National Institute of Technology, Srinivasnagar 575 025, India
      2. Department of Physics, Indian Institute of Science, Bangalore 560 012, India

    • Dates

       
      Published
      December 2003
      Manuscript received
      30 September 2002

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