High dielectric constant (high-𝑘) Ta2O5 films have been deposited on ZnO/𝑝-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/𝑝-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/𝑝-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance–voltage (𝐶–𝑉), conductance–voltage (𝐺–𝑉) and current–voltage (𝐼–𝑉) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler–Nordheim (𝐹–𝑁) constant current stressing.
Volume 42 | Issue 6
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