• Fulltext

       

        Click here to view fulltext PDF


      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/026/04/0365-0369

    • Keywords

       

      ZnO; Ta2O5; rf magnetron sputtering; microwave plasma; PECVD; high-𝑘.

    • Abstract

       

      High dielectric constant (high-𝑘) Ta2O5 films have been deposited on ZnO/𝑝-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/𝑝-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/𝑝-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitance–voltage (𝐶–𝑉), conductance–voltage (𝐺–𝑉) and current–voltage (𝐼–𝑉) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowler–Nordheim (𝐹–𝑁) constant current stressing.

    • Author Affiliations

       

      S K Nandi1 S Chatterjee1 S K Samanta1 G K Dalapati1 P K Bose2 S Varma3 Shivprasad Patil3 C K Maiti1

      1. Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, India
      2. Department of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India
      3. Institute of Physics, Bhubaneswar 751 005, India
    • Dates

       
  • Bulletin of Materials Science | News

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

© 2017-2019 Indian Academy of Sciences, Bengaluru.