• Ground state structures and properties of small hydrogenated silicon clusters

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      https://www.ias.ac.in/article/fulltext/boms/026/01/0117-0121

    • Keywords

       

      Ground state; hydrogenated silicon; Car–Parrinello; simulated annealing.

    • Abstract

       

      We present results for ground state structures and properties of small hydrogenated silicon clusters using the Car–Parrinello molecular dynamics with simulated annealing. We discuss the nature of bonding of hydrogen in these clusters. We find that hydrogen can form a bridge like Si–H–Si bond connecting two silicon atoms. We find that in the case of a compact and closed silicon cluster hydrogen bonds to the silicon cluster from outside. To understand the structural evolutions and properties of silicon cluster due to hydrogenation, we have studied the cohesive energy and first excited electronic level gap of clusters as a function of hydrogenation. We find that first excited electronic level gap of Si𝑛 and Si𝑛H fluctuates as function of size and this may provide a first principle basis for the short-range potential fluctuations in hydrogenated amorphous silicon. The stability of hydrogenated silicon clusters is also discussed.

    • Author Affiliations

       

      R Prasad1

      1. Department of Physics, Indian Institute of Technology, Kanpur 208 016, India
    • Dates

       
  • Bulletin of Materials Science | News

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