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Thermal plasma; rice husk; silicon carbide.

A new route for production of SiC from rice husk is reported by employing thermal plasma technique. The formation of 𝛽-SiC is observed in a short time of 5 min. The samples are characterized by XRD and SEM.

S K Singh¹ B C Mohanty¹ S Basu²

1. Regional Research Laboratory, Bhubaneswar 751 013, India
2. Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302, India

Published

November 2002