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    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/025/06/0549-0551

    • Keywords

       

      Plasma immersion ion implantation; oxidation rate; gate dielectric; diffusion barrier; copper metallization.

    • Abstract

       

      Many semiconductor integrated circuit manufacturing processes require high dose of implantation at very low energies. Conventional beam line ion implantation system suffers from low beam current at low energies, therefore, cannot be used economically for high dose applications. Plasma immersion ion implantation (PIII) is emerging as a potential technique for such implantations. This method offers high dose rate irrespective of implantation energy. In the present study nitrogen ions were implanted using PIII in order to modify the properties of silicon and some refractory metal films. Oxidation behaviour of silicon was observed for different implantation doses. Diffusion barrier properties of refractory barrier metals were studied for copper metallization.

    • Author Affiliations

       

      Mukesh Kumar1 Rajkumar2 Dinesh Kumar1 P J George1

      1. Department of Electronic Science, Kurukshetra University, Kurukshetra 136 119, India
      2. Semiconductor Complex Ltd., Industrial Area Phase 8, Mohali 160 059, India

    • Dates

       
      Published
      November 2002

  • Bulletin of Materials Science | News

    • Dr Shanti Swarup Bhatnagar for Science and Technology

      Posted on October 12, 2020

      Prof. Subi Jacob George — Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bengaluru
      Chemical Sciences 2020

      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
      Physical Sciences 2020

    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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