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- Characteristics of HgCdTe epilayer grown by LPE using horizontal slider
  
  J K Radhakrishnan S Sitharaman S C Gupta
  
  Volume 25 Issue 6 November 2002 pp 483-486
- Fulltext
  
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  Permanent link:
  https://www.ias.ac.in/article/fulltext/boms/025/06/0483-0486
- Keywords
  
  HgCdTe; LPE; characterization.
- Abstract
  
  The characteristics of HgCdTe epilayers grown in a modified horizontal slider system, are reported here. The surface morphology of the grown layers, their IR transmission characteristics, depth and lateral compositional uniformity, structural and electrical characteristics are discussed.
- Author Affiliations
  J K Radhakrishnan¹ S Sitharaman¹ S C Gupta¹
  1. Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, India
- Dates
  
  Published
  November 2002

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