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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/025/06/0455-0457

    • Keywords

       

      ZrO2; high-𝑘 dielectric; SiGe MOS devices.

    • Abstract

       

      The potential of ZrO2 thin film as a high-𝜅 gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10–4 A/cm2 at 1 V has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of 2 × 1011 cm–2eV–1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.

    • Author Affiliations

       

      R Mahapatra1 G S Kar1 C B Samantaray1 A Dhar1 D Bhattacharya2 S K Ray1

      1. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India
      2. Material Science Centre, Indian Institute of Technology, Kharagpur 721 302, India

    • Dates

       
      Published
      November 2002

  • Bulletin of Materials Science | News

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      Prof. Surajit Dhara — School of Physics, University of Hyderabad, Hyderabad
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    • Editorial Note on Continuous Article Publication

      Posted on July 25, 2019

      Click here for Editorial Note on CAP Mode

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