The potential of ZrO2 thin film as a high-𝜅 gate dielectric for scaled MOSFET devices has been studied. ZrO2 has been deposited directly on a Si0.8Ge0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10–4 A/cm2 at 1 V has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of 2 × 1011 cm–2eV–1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.
Volume 42 | Issue 5
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