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ZrO₂; high-𝑘 dielectric; SiGe MOS devices.

The potential of ZrO₂ thin film as a high-𝜅 gate dielectric for scaled MOSFET devices has been studied. ZrO₂ has been deposited directly on a Si_0.8Ge_0.2 substrate by reactive RF magnetron sputtering. An equivalent oxide thickness of < 20 Å with a leakage current of the order of 10^–4 A/cm² at 1 V has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of 2 × 10¹¹ cm^–2eV^–1 have been achieved. The deposited dielectric exhibits low charge trapping under constant current stressing.

R Mahapatra¹ G S Kar¹ C B Samantaray¹ A Dhar¹ D Bhattacharya² S K Ray¹

1. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India
2. Material Science Centre, Indian Institute of Technology, Kharagpur 721 302, India

Published

November 2002