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    • Electrical properties of silver selenide thin films prepared by reactive evaporation

      M C Santhosh Kumar B Pradeep

      Thin Films Volume 25 Issue 5 October 2002 pp 407-411

    • Fulltext

       

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      Permanent link:
      https://www.ias.ac.in/article/fulltext/boms/025/05/0407-0411

    • Keywords

       

      Thin film; silver selenide; reactive evaporation; electrical conductivity.

    • Abstract

       

      The electrical properties of silver selenide thin films prepared by reactive evaporation have been studied. Samples show a polymorphic phase transition at a temperature of 403 ± 2 K. Hall effect study shows that it has a mobility of 2000 cm2V–1s–1 and carrier concentration of 1018 cm–3 at room temperature. The carriers are of 𝑛-type. X-ray diffraction study indicates that the as-prepared films are polycrystalline in nature. The lattice parameters were found to be 𝑎 = 4.353 Å, 𝑏 = 6.929 Å and 𝑐 = 7.805 Å.

    • Author Affiliations

       

      M C Santhosh Kumar1 B Pradeep1

      1. Department of Physics, Cochin University of Science and Technology, Cochin 682 022, India

    • Dates

       
      Published
      October 2002
      Manuscript received
      29 July 2001
      Manuscript revised
      17 August 2002

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