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      https://www.ias.ac.in/article/fulltext/boms/025/04/0335-0340

    • Keywords

       

      Solid state diffusion; lattice dynamics; impurity diffusion.

    • Abstract

       

      Theoretical studies are carried out to ascertain the dominant mechanism of Si diffusion in GaAs. Lattice dynamical model calculations have shown that the most probable diffusion mechanism is through a single vacancy even though several experiments cannot fix the mechanism as substitutional, substitutional–interstitial pair or neutral defect pair.

    • Author Affiliations

       

      P Murugan1 R Pothiraj2 S D D Roy3 K Ramachandran1

      1. School of Physics, Madurai Kamaraj University, Madurai 625 021, India
      2. Department of Physics, Sri SRNM College, Sattur 626 203, India
      3. Permanent address: NM Christian College, Martandam 629 165, India
    • Dates

       
  • Bulletin of Materials Science | News

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